Invention Grant
- Patent Title: Apparatus for improved power distribution in a three dimensional vertical integrated circuit
- Patent Title (中): 用于改进三维垂直集成电路中功率分配的装置
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Application No.: US11930409Application Date: 2007-10-31
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Publication No.: US07701064B2Publication Date: 2010-04-20
- Inventor: Todd Alan Christensen , John Edward Sheets, II
- Applicant: Todd Alan Christensen , John Edward Sheets, II
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Matthew C. Zehrer
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/02 ; H01L23/04
Abstract:
A first through via is electrically insulated from surrounding wafer substrate material. A second through via is not electrically insulated from the surrounding wafer substrate material. This configuration is advantageous when the non-insulated via serves as the path for either Vdd or GND. By not insulating the through via, a first supply voltage (Vdd or GND) is allowed to flow through the surrounding wafer substrate material thereby decreasing the resistance of the first supply voltage path.
Public/Granted literature
- US20090108457A1 Apparatus for Improved Power Distribution in a Three Dimensional Vertical Integrated Circuit Public/Granted day:2009-04-30
Information query
IPC分类:
