Invention Grant
- Patent Title: Semiconductor device having bulb-shaped recess gate and method for fabricating the same
- Patent Title (中): 具有灯泡形凹槽的半导体器件及其制造方法
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Application No.: US11725933Application Date: 2007-03-19
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Publication No.: US07700979B2Publication Date: 2010-04-20
- Inventor: Sang-Oak Shim
- Applicant: Sang-Oak Shim
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2006-0025821 20060321
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes: a substrate; a first junction region and a second junction region formed separately from each other in the substrate; an etch barrier layer formed in the substrate underneath the first junction region; and a plurality of recess channels formed in the substrate between the first junction region and the second junction region.
Public/Granted literature
- US20070235778A1 Semiconductor device having bulb-shaped recess gate and method for fabricating the same Public/Granted day:2007-10-11
Information query
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