Invention Grant
US07700892B2 Sequential lateral solidification device and method of crystallizing silicon using the same 失效
顺序侧向凝固装置及使用其结晶硅的方法

  • Patent Title: Sequential lateral solidification device and method of crystallizing silicon using the same
  • Patent Title (中): 顺序侧向凝固装置及使用其结晶硅的方法
  • Application No.: US10880318
    Application Date: 2004-06-30
  • Publication No.: US07700892B2
    Publication Date: 2010-04-20
  • Inventor: Yun Ho Jung
  • Applicant: Yun Ho Jung
  • Applicant Address: KR Seoul
  • Assignee: LG Display Co., Ltd.
  • Current Assignee: LG Display Co., Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: McKenna Long & Aldridge LLP
  • Priority: KR10-2003-0064507 20030917
  • Main IPC: B23K26/04
  • IPC: B23K26/04
Sequential lateral solidification device and method of crystallizing silicon using the same
Abstract:
A sequential lateral solidification device and a method of crystallizing silicon using the same controls a size and arrangement overlapping areas of laser beam patterns adjacently irradiated onto a substrate to within specific regions of a pixel area and a driving area outside the pixel area. The device includes a laser generating device irradiating a laser beam, a focusing lens focusing the laser beam, a mask having a pattern of transparent regions permitting the laser beam to be transmitted a laser beam pattern, a reduction lens reducing the laser beam pattern transmitted by the mask, a substrate having a pixel area and a driving area exposed to the irradiated laser beam pattern, a moveable stage having, on which the substrate is mounted, and a position sensor sensing an position of the irradiated laser beam pattern and controlling a size and arrangement overlapping areas between adjacently irradiated laser beam patterns.
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