Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US11144772Application Date: 2005-06-06
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Publication No.: US07675954B2Publication Date: 2010-03-09
- Inventor: Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
- Applicant: Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2004-212508 20040721
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/02

Abstract:
A semiconductor laser device includes: an electrically insulating film on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shape with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
Public/Granted literature
- US20060018358A1 Semiconductor laser device Public/Granted day:2006-01-26
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