Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11802462Application Date: 2007-05-23
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Publication No.: US07675808B2Publication Date: 2010-03-09
- Inventor: Yoshiyuki Kurokawa
- Applicant: Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-145970 20060525
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
An object is to realize high-capacity of a memory while reducing power consumption and making the power consumption even throughout the memory. A memory includes a plurality of memory block arranged to be symmetrically to each other. Also, a specific combination of signals among address signals supplied to the memory, a memory block including a memory cell to be read from or written to is specified. Further, signals supplied to other memory blocks than the above memory block is maintained at a constant value. Consequently, a wiring length of a bit line in a memory array can be shortened, and current consumption can be made to be even among data reading or writing from/to memory cells of a variety of addresses within the memory, at the same time as reducing load capacitance.
Public/Granted literature
- US20070280028A1 Semiconductor device Public/Granted day:2007-12-06
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