Invention Grant
- Patent Title: Semiconductor integrated circuit device and semiconductor device including plurality of semiconductor circuits
- Patent Title (中): 半导体集成电路器件和包括多个半导体电路的半导体器件
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Application No.: US11975470Application Date: 2007-10-19
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Publication No.: US07675804B2Publication Date: 2010-03-09
- Inventor: Atsushi Kawasumi
- Applicant: Atsushi Kawasumi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Sprinkle IP Law Group
- Priority: JP2006-286916 20061020
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A semiconductor integrated circuit device includes a first semiconductor circuit, a second semiconductor circuit, a first control circuit and a second control circuit. The first and second semiconductor circuits are formed on a semiconductor substrate and operate using a voltage provided by an external power supply circuit as a power supply voltage. The first control circuit is formed on the semiconductor substrate and holds control information used to control the voltage generated by the external power supply circuit in accordance with operating performance of the first and second semiconductor circuits. The second control circuit controls a property of the first semiconductor circuit in accordance with the control information held by the first control circuit.
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