Invention Grant
US07675798B2 Sense amplifier control circuit and semiconductor device using the same
失效
感应放大器控制电路和使用其的半导体器件
- Patent Title: Sense amplifier control circuit and semiconductor device using the same
- Patent Title (中): 感应放大器控制电路和使用其的半导体器件
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Application No.: US11648321Application Date: 2006-12-29
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Publication No.: US07675798B2Publication Date: 2010-03-09
- Inventor: Woo Seok Song
- Applicant: Woo Seok Song
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2006-0016436 20060220
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/14

Abstract:
A sense amplifier control circuit which can be used in a semiconductor device includes an enable signal generator for decoding a plurality of internal commands, to output a first enable signal and a second enable signal which are enabled in an active mode of a semiconductor device, a first driving control signal generator for generating a first driving control signal adapted to control a driving period of a pull-down source line of a sense amplifier included in the semiconductor device, a second driving control signal generator for comparing a voltage level of a pull-up source line of the sense amplifier with a predetermined internal voltage, and generating a second driving control signal which is enabled when the voltage level of the pull-up source line is higher than the internal voltage, to control the driving period of the pull-up source line, and a third driving control signal generator for generating a third driving control signal which is disabled in response to enabling of the second driving control signal, to control an over-driving period of the pull-up source line.
Public/Granted literature
- US20070195624A1 Sense amplifier control circuit and semiconductor device using the same Public/Granted day:2007-08-23
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