Invention Grant
US07675767B2 Semiconductor memory device for achieving high reliability without increasing process complexity and cost
失效
用于实现高可靠性而不增加工艺复杂性和成本的半导体存储器件
- Patent Title: Semiconductor memory device for achieving high reliability without increasing process complexity and cost
- Patent Title (中): 用于实现高可靠性而不增加工艺复杂性和成本的半导体存储器件
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Application No.: US11598713Application Date: 2006-11-14
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Publication No.: US07675767B2Publication Date: 2010-03-09
- Inventor: Hiroyuki Takahashi
- Applicant: Hiroyuki Takahashi
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2005-329883 20051115
- Main IPC: G11C11/24
- IPC: G11C11/24
Abstract:
A semiconductor memory device is provided with a DRAM array and a control circuit. The DRAM array includes first and second storage areas. The control circuit controls an access to said DRAM array so that data hold characteristics of said first storage area are superior to those of said second storage area.
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