Invention Grant
US07675512B2 Memory circuit, display device and electronic equipment each comprising the same
有权
存储器电路，显示装置和各自包括其的电子设备
- Patent Title: Memory circuit, display device and electronic equipment each comprising the same
- Patent Title (中): 存储器电路，显示装置和各自包括其的电子设备
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Application No.: US10890110Application Date: 2004-07-14
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Publication No.: US07675512B2Publication Date: 2010-03-09
- Inventor: Jun Koyama , Tomoaki Atsumi
- Applicant: Jun Koyama , Tomoaki Atsumi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2003-277068 20030718
- Main IPC: G09G5/00
- IPC: G09G5/00
Abstract:
A memory circuit using a thin film transistor has been problems such as the drop in yield and the decrease in speed of response of the memory circuit due to variations in transistors. The purpose of the invention is to improve the yield and speed of the response of a memory cell by driving a word line by a voltage which is different from the logical amplitude of the memory cell. The invention is applicable to an SRAM, a DRAM, a mask ROM, and the like. A memory circuit of the invention is formed integrally with a display device for realizing a multi-functional display device.
Public/Granted literature
- US20050013180A1 Memory circuit, display device and electronic equipment each comprising the same Public/Granted day:2005-01-20
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