Invention Grant
- Patent Title: Semiconductor device that degrades leak current of a transistor
- Patent Title (中): 降低晶体管漏电流的半导体器件
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Application No.: US11758394Application Date: 2007-06-05
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Publication No.: US07675355B2Publication Date: 2010-03-09
- Inventor: Mitsuyuki Ashida , Mototsugu Hamada
- Applicant: Mitsuyuki Ashida , Mototsugu Hamada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-161469 20060609
- Main IPC: H03M1/12
- IPC: H03M1/12
Abstract:
A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.
Public/Granted literature
- US20070296485A1 SEMICONDUCTOR DEVICE Public/Granted day:2007-12-27
Information query
