Invention Grant
- Patent Title: Die warpage control
- Patent Title (中): 模翘曲控制
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Application No.: US11862844Application Date: 2007-09-27
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Publication No.: US07675182B2Publication Date: 2010-03-09
- Inventor: Hai Xiao Sun , Daoqiang Lu
- Applicant: Hai Xiao Sun , Daoqiang Lu
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/29
- IPC: H01L23/29

Abstract:
A semiconductor package comprises a substrate; a semiconductor die that comprises a set of one or more interconnects on one side to couple to the substrate; and a shape memory alloy layer provided on another side of the semiconductor die to compensate warpage of the semiconductor die. The shape memory alloy layer deforms with warpage of the semiconductor die and changes from the deformed shape to an original shape to flatten the semiconductor die in response to rise of a temperature during coupling of the die to the substrate.
Public/Granted literature
- US20090085228A1 DIE WARPAGE CONTROL Public/Granted day:2009-04-02
Information query
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