Invention Grant
- Patent Title: Manufacturing semiconductor circuit, corresponding semiconductor circuit, and associated design process
- Patent Title (中): 制造半导体电路，相应的半导体电路及相关设计过程
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Application No.: US11583762Application Date: 2006-10-18
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Publication No.: US07675173B2Publication Date: 2010-03-09
- Inventor: Walther Lutz , Erwin Ruderer
- Applicant: Walther Lutz , Erwin Ruderer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102005049793 20051018
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/44
Abstract:
A process of manufacturing a semiconductor circuit includes providing a substrate layer, forming a metal layer above the substrate layer, incorporating circuit components in the substrate layer, and electrically connecting the circuit components to the metal layer. The process includes configuring the circuit components to perform an electrical function of the semiconductor circuit. The semiconductor circuit has a specific electrical conductivity between the substrate layer and the metal layer based on the electrical function performed. The process includes increasing the electrical conductivity between the substrate layer and the metal layer compared with the specific electrical conductivity.
Public/Granted literature
- US20070096216A1 Manufacturing semiconductor circuit, corresponding semiconductor circuit, and associated design process Public/Granted day:2007-05-03
Information query
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