On-chip capacitor structure

Invention Grant

US07675138B2 On-chip capacitor structure 有权

Title translation: 片上电容器结构

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Patent Title: On-chip capacitor structure
Patent Title (中): 片上电容器结构
Application No.: US11241142

Application Date: 2005-09-30
Publication No.: US07675138B2

Publication Date: 2010-03-09
Inventor: Bo Zhang
Applicant: Bo Zhang
Applicant Address: US CA Irvine
Assignee: Broadcom Corporation
Current Assignee: Broadcom Corporation
Current Assignee Address: US CA Irvine
Agency: Brake Hughes Bellermann LLP
Main IPC: H01L29/41
IPC: H01L29/41 ; H01L21/02

Abstract:

A first capacitor is formed on a substrate and connected to a first differential node of a differential circuit, and a second capacitor is formed on the substrate and connected to a second differential node of the differential circuit. A third capacitor is connected between the first differential node and the second differential node, and is formed at least partially above the first capacitor. In this way, a size of the first capacitor and/or the second capacitor may be reduced on the substrate.

Abstract(Chinese):

第一电容器形成在衬底上并连接到差分电路的第一差分节点，并且第二电容器形成在衬底上并连接到差分电路的第二差分节点。第三电容器连接在第一差分节点和第二差分节点之间，并且至少部分地形成在第一电容器的上方。以这种方式，可以在基板上减小第一电容器和/或第二电容器的尺寸。

Public/Granted literature

US20070075397A1 On-chip capacitor structure Public/Granted day:2007-04-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/40	.按其电极特征区分的
H01L29/41	..以其形状、相对尺寸或位置为特征的