Invention Grant
- Patent Title: Waveguide photodetector
- Patent Title (中): 波导光电探测器
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Application No.: US12332408Application Date: 2008-12-11
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Publication No.: US07675130B2Publication Date: 2010-03-09
- Inventor: Masaharu Nakaji
- Applicant: Masaharu Nakaji
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2008-168719 20080627
- Main IPC: H01L31/0304
- IPC: H01L31/0304

Abstract:
A waveguide photodetector detecting light incident on a light detecting end face includes: a substrate; and a layer stack structure on the substrate and including a semiconductor layer of a first conductivity type, an undoped semiconductor layer, and a semiconductor layer of a second conductivity type. The undoped semiconductor layer includes two or more undoped light absorbing layers and undoped non-light-absorbing layers. One non-light-absorbing layer is disposed between adjacent undoped light absorbing layers. The non-light-absorbing layers have a bandgap wavelength shorter than the wavelength of the incident light that is detected.
Public/Granted literature
- US20090321868A1 WAVEGUIDE PHOTODETECTOR Public/Granted day:2009-12-31
Information query
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