Invention Grant
- Patent Title: Metal oxide semiconductor field effect transistor and method of fabricating the same
- Patent Title (中): 金属氧化物半导体场效应晶体管及其制造方法
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Application No.: US11320302Application Date: 2005-12-29
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Publication No.: US07675126B2Publication Date: 2010-03-09
- Inventor: Yong Soo Cho
- Applicant: Yong Soo Cho
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: KR10-2004-0117128 20041230
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
There are provided a MOSFET and a method for fabricating the same. The MOSFET includes a semiconductor substrate, a first epitaxial layer in a predetermined location of the semiconductor substrate, a second epitaxial layer doped with high concentration impurity ions on the first epitaxial layer, a gate structure on the second epitaxial layer, and source/drain regions with lightly doped drain (LDD) regions. The first epitaxial layer supplies carriers to the second epitaxial layer so that short channel effects are reduced.
Public/Granted literature
- US20060163674A1 Metal oxide semiconductor field effect transistor and method of fabricating the same Public/Granted day:2006-07-27
Information query
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