A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.