Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US11146071Application Date: 2005-06-07
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Publication No.: US07675115B2Publication Date: 2010-03-09
- Inventor: Tsutomu Tezuka
- Applicant: Tsutomu Tezuka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-170403 20040608
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A semiconductor device includes a Si substrate, an insulating film formed on onepart of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex (0
Public/Granted literature
- US20050269595A1 Semiconductor device and method for manufacturing the same Public/Granted day:2005-12-08
Information query
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