Invention Grant
- Patent Title: Trench transistor with increased avalanche strength
- Patent Title (中): 具有雪崩强度增加的沟槽晶体管
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Application No.: US11393092Application Date: 2006-03-30
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Publication No.: US07675114B2Publication Date: 2010-03-09
- Inventor: Markus Zundel
- Applicant: Markus Zundel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102005014744 20050331
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L31/113
Abstract:
In order to obtain an increased avalanche strength, a trench transistor is proposed in which the breakdown location is defined in a trench bottom region below body contact zones. This is done by means of a modulation of the dopant concentration in a drift zone and an insulation layer thickness modulation in the bottom region of the trenches.
Public/Granted literature
- US20060278922A1 Trench transistor with increased avalanche strength Public/Granted day:2006-12-14
Information query
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