Invention Grant
- Patent Title: Insulated gate transistor
- Patent Title (中): 绝缘栅晶体管
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Application No.: US11843301Application Date: 2007-08-22
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Publication No.: US07675113B2Publication Date: 2010-03-09
- Inventor: Shunsuke Sakamoto , Eisuke Suekawa , Tetsujiro Tsunoda
- Applicant: Shunsuke Sakamoto , Eisuke Suekawa , Tetsujiro Tsunoda
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-064995 20070314
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/74
Abstract:
A charge storage layer of first conductive type is formed on the first principal surface of a semiconductor substrate. A base layer of second conductive type is formed on the charge storage layer. Each trench formed through the base layer and the charge storage layer is lined with an insulating film and filled with a trench gate electrode. Dummy trenches are formed on both sides of each trench. Source layers of first conductive type are selectively formed in the surface of the base layer and in contact with the sidewalls of the trenches. The source layers are spaced apart from each other and arranged in the longitudinal direction of the trenches. A contact layer of second conductive type is formed in the surface of the base layer and between each two adjacent source layers arranged in the longitudinal direction of the trenches. A collector layer of second conductive type is formed on the second principal surface of the semiconductor substrate.
Public/Granted literature
- US20080224207A1 INSULATED GATE TRANSISTOR Public/Granted day:2008-09-18
Information query
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