Invention Grant
US07675055B2 Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof
失效
旋转晶片上的应变互补金属氧化物半导体（CMOS）及其方法
- Patent Title: Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof
- Patent Title (中): 旋转晶片上的应变互补金属氧化物半导体（CMOS）及其方法
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Application No.: US11925088Application Date: 2007-10-26
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Publication No.: US07675055B2Publication Date: 2010-03-09
- Inventor: Meikei Ieong , Qiging C. Ouyang , Kern Rim
- Applicant: Meikei Ieong , Qiging C. Ouyang , Kern Rim
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
The present invention provides CMOS structures including at least one strained pFET that is located on a rotated semiconductor substrate to improve the device performance. Specifically, the present invention utilizes a Si-containing semiconductor substrate having a (100) crystal orientation in which the substrate is rotated by about 45° such that the CMOS device channels are located along the direction. Strain can be induced upon the CMOS structure including at least a pFET and optionally an nFET, particularly the channels, by forming a stressed liner about the FET, by forming embedded stressed wells in the substrate, or by utilizing a combination of embedded stressed wells and a stressed liner. The present invention also provides methods for fabricating the aforesaid semiconductor structures.
Public/Granted literature
- US20080042215A1 STRAINED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ON ROTATED WAFERS AND METHODS THEREOF Public/Granted day:2008-02-21
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