Invention Grant
US07674727B2 Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
有权
TEOS /臭氧CVD的一氧化二氮退火以改善间隙填料
- Patent Title: Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
- Patent Title (中): TEOS /臭氧CVD的一氧化二氮退火以改善间隙填料
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Application No.: US11549919Application Date: 2006-10-16
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Publication No.: US07674727B2Publication Date: 2010-03-09
- Inventor: Zheng Yuan , Reza Arghavani , Shankar Venkataraman
- Applicant: Zheng Yuan , Reza Arghavani , Shankar Venkataraman
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas). The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.
Public/Granted literature
- US20070059896A1 NITROUS OXIDE ANNEAL OF TEOS/OZONE CVD FOR IMPROVED GAPFILL Public/Granted day:2007-03-15
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