Invention Grant
- Patent Title: Nitride semiconductor light-emitting device and fabrication method thereof
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US11631858Application Date: 2005-07-08
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Publication No.: US07674692B2Publication Date: 2010-03-09
- Inventor: Ho Sang Yoon
- Applicant: Ho Sang Yoon
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2004-0052826 20040708
- International Application: PCT/KR2005/002206 WO 20050708
- International Announcement: WO2006/006804 WO 20060119
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
Provided is a method of fabricating a nitride semiconductor light-emitting device comprising; providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation metal, vibrating the nitride semiconductor light-emitting device and the hydrogen separation metal, removing hydrogen from the GaN layer of the nitride semiconductor light-emitting device and separating the hydrogen separation metal from the nitride semiconductor light-emitting device.
Public/Granted literature
- US20070194309A1 Nitride Semiconductor Light-Emitting Device And Fabrication Method Thereof Public/Granted day:2007-08-23
Information query
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