Invention Grant
- Patent Title: Capacitor integration at top-metal level with a protective cladding for copper surface protection
- Patent Title (中): 电容器集成在顶级金属层与铜表面保护用保护层
-
Application No.: US10697138Application Date: 2003-10-30
-
Publication No.: US07674682B2Publication Date: 2010-03-09
- Inventor: Edmund Burke , Satyavolu S. Papa Rao , Timothy A. Rost
- Applicant: Edmund Burke , Satyavolu S. Papa Rao , Timothy A. Rost
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (106) is integrated at the top metal interconnect level (104) and includes surface protection cladding (109) for the copper metal (104b) of the top metal interconnect.
Public/Granted literature
- US20050093093A1 Capacitor integration at top-metal level with a protective cladding for copper surface protection Public/Granted day:2005-05-05
Information query
IPC分类:
