Invention Grant
- Patent Title: Semiconductor device and a method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11773802Application Date: 2007-07-05
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Publication No.: US07674677B2Publication Date: 2010-03-09
- Inventor: Sung Kil Chun
- Applicant: Sung Kil Chun
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0049654 20070522
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes a semiconductor substrate provided with an active region including a gate forming area, a source forming area and a drain forming area. A recess is formed in the gate forming area. A gate is formed over the gate forming area that is formed with the recess and includes an insulation layer formed at an upper end portion of a side wall of the recess that is in contact with the source forming area. A source area and a drain area are formed in the active region on opposite sides of the gate.
Public/Granted literature
- US20080290404A1 SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-11-27
Information query
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