Invention Grant
- Patent Title: Methods of forming threshold voltage implant regions
- Patent Title (中): 形成阈值电压注入区域的方法
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Application No.: US11406893Application Date: 2006-04-18
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Publication No.: US07674670B2Publication Date: 2010-03-09
- Inventor: Hongmei Wang , Kurt D. Beigel , Fred D. Fishburn , Rongsheng Yang
- Applicant: Hongmei Wang , Kurt D. Beigel , Fred D. Fishburn , Rongsheng Yang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.
Public/Granted literature
- US20060199341A1 Methods of forming threshold voltage implant regions Public/Granted day:2006-09-07
Information query
IPC分类:
