Invention Grant
- Patent Title: Gallium nitride semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 氮化镓半导体发光器件及其制造方法
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Application No.: US11443376Application Date: 2006-05-31
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Publication No.: US07674643B2Publication Date: 2010-03-09
- Inventor: Jae Hoon Lee , Jung Hee Lee , Je Won Kim
- Applicant: Jae Hoon Lee , Jung Hee Lee , Je Won Kim
- Applicant Address: KR Suwon, Kyungki-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Kyungki-Do
- Agency: Lowe Hauptman Ham & Berner
- Priority: KR2003-95988 20031224
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.
Public/Granted literature
- US20060215256A1 Gallium nitride semiconductor light emitting device and method of manufacturing the same Public/Granted day:2006-09-28
Information query
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