Invention Grant
US07674567B2 Positive resist composition and pattern forming method using the same
有权
正型抗蚀剂组合物和使用其的图案形成方法
- Patent Title: Positive resist composition and pattern forming method using the same
- Patent Title (中): 正型抗蚀剂组合物和使用其的图案形成方法
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Application No.: US11523551Application Date: 2006-09-20
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Publication No.: US07674567B2Publication Date: 2010-03-09
- Inventor: Kei Yamamoto , Shinichi Kanna
- Applicant: Kei Yamamoto , Shinichi Kanna
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPP2005-272074 20050920
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30
Abstract:
A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.
Public/Granted literature
- US20070065752A1 Positive resist composition and pattern forming method using the same Public/Granted day:2007-03-22
Information query
IPC分类:
