Invention Grant
- Patent Title: Method for manufacturing isotope-doped carbon nanotubes
- Patent Title (中): 制造同位素掺杂碳纳米管的方法
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Application No.: US11140196Application Date: 2005-05-27
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Publication No.: US07674448B2Publication Date: 2010-03-09
- Inventor: Shou-Shan Fan , Liang Liu
- Applicant: Shou-Shan Fan , Liang Liu
- Applicant Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Agent Clifford O. Chi
- Priority: CN2004100276357 20040609
- Main IPC: D01F9/12
- IPC: D01F9/12 ; B01J19/08

Abstract:
A method for manufacturing isotope-doped carbon nanotubes (10) includes the steps of: (a) providing a carbon rod (209), the carbon rod including at least two kinds of carbon isotope segments (202, 203) arranged therealong according to need; (b) providing a laser beam source positioned opposite to the carbon rod; and (c) irradiating the carbon rod with a laser beam (214), wherein the carbon isotope segments of the carbon rod are consumed sequentially to form the isotope-doped carbon nanotubes. Growth mechanisms of the isotope-doped carbon nanotubes manufactured by this method can be readily studied.
Public/Granted literature
- US20050276742A1 Method for manufacturing isotope-doped carbon nanotubes Public/Granted day:2005-12-15
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