Invention Grant
- Patent Title: Modeling device variations in integrated circuit design
- Patent Title (中): 集成电路设计中的建模设备变化
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Application No.: US11586827Application Date: 2006-10-24
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Publication No.: US07673260B2Publication Date: 2010-03-02
- Inventor: Haizhou Chen , Li-Fu Chang , Richard Rouse , Nishath Verghese
- Applicant: Haizhou Chen , Li-Fu Chang , Richard Rouse , Nishath Verghese
- Applicant Address: US CA San Jose
- Assignee: Cadence Design Systems, Inc.
- Current Assignee: Cadence Design Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Sheppard Mullin Richter & Hampton LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
DFM systems are provided that incorporate manufacturing variations in the analysis of integrated circuits by calculating predicted manufacturing variations on the shapes of interconnects and devices of the drawn layout of a circuit design. The shape variation on interconnects is converted to variations in resistor-capacitor (RC) parasitics. The shape variation on devices is converted to variations in device parameters. The variation in device parameters and wire parasitics is converted to changes in timing performance, signal integrity, and power consumption by determining the impact of device parameter and wire parasitic variations on the behavior of each instance of a standard cell. The results from these analyses are integrated back into the design flow as incremental delay files (timing), noise failures and buffer insertion/driver resizing commands (noise), and leakage power hotspots and cell substitution commands (power consumption).
Public/Granted literature
- US20070099314A1 Modeling device variations in integrated circuit design Public/Granted day:2007-05-03
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