Invention Grant
- Patent Title: Semiconductor integrated circuit device with power source areas
- Patent Title (中): 具有电源区的半导体集成电路器件
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Application No.: US11588259Application Date: 2006-10-27
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Publication No.: US07673163B2Publication Date: 2010-03-02
- Inventor: Akifumi Tsukimori , Takahiro Irita , Hisashi Kato
- Applicant: Akifumi Tsukimori , Takahiro Irita , Hisashi Kato
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Renesas Technology Corp.,NTT Docomo, Inc.
- Current Assignee: Renesas Technology Corp.,NTT Docomo, Inc.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-314137 20051028
- Main IPC: G06F1/26
- IPC: G06F1/26

Abstract:
The power supply is effectively controlled in a semiconductor integrated circuit device having a multi domain structure so as to reduce the power consumption. When an interrupt signal is inputted, the system controller makes an instruction of wakeup to the corresponding switch control unit. At this moment, the system controller controls power supply so as to be supplied sequentially from the core power source area belonging to the lower hierarchical level dependent on the core power source area to which power is supplied. The system controller outputs the power supply switch-on request signal to the switch control unit. The switch control unit turns ON the power supply switch and sends the power-on completion signal back to the system controller. Similarly, the system controller supplies power sequentially to core power source areas in the dependency relation one after another from the lower hierarchy to the upper hierarchy.
Public/Granted literature
- US20070101174A1 Semiconductor integrated circuit device Public/Granted day:2007-05-03
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