Invention Grant
US07672181B2 Semiconductor memory, test method of semiconductor memory and system 失效
半导体存储器,半导体存储器和系统的测试方法

Semiconductor memory, test method of semiconductor memory and system
Abstract:
Each sub word line is coupled to a gate of a transfer transistor of a memory cell. A first switch of a sub word decoder couples the sub word line to a high level voltage line when a main word line is in an activation level. A second switch couples the sub word line to a low level voltage line when the main word line is in an inactivation level. A third switch couples the sub word line to the low level voltage line when a word reset signal line is in an activation level. A reset control circuit disables the inactivation of the main word line or the activation of the word reset signal line during a test mode. One of the second and third switches is forcibly turned off, and thereby, an operation failure of a sub word decoder can be detected easily.
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