Invention Grant
- Patent Title: Electrical overstress protection
- Patent Title (中): 电气过载保护
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Application No.: US11964095Application Date: 2007-12-26
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Publication No.: US07672102B2Publication Date: 2010-03-02
- Inventor: Wolfgang Kemper
- Applicant: Wolfgang Kemper
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
In one aspect, a method for protection of an integrated circuit device includes but is not limited to detecting a first current in the integrated circuit device, wherein the first current is caused by a second current; and shunting the second current away from the integrated circuit device in response to detecting the first current. Such detecting may include but not be limited to detecting the first current by detecting a voltage drop across a sensing resistor, which may include but not be limited to using at least two sensing transistors. Such shunting may include but not be limited to using at least one shunting transistor.
Public/Granted literature
- US20080158748A1 Electrical Overstress Protection Public/Granted day:2008-07-03
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