Invention Grant
US07672094B2 TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
有权
TMR传感器具有用氮气处理的底层以提高磁阻
- Patent Title: TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
- Patent Title (中): TMR传感器具有用氮气处理的底层以提高磁阻
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Application No.: US12126758Application Date: 2008-05-23
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Publication No.: US07672094B2Publication Date: 2010-03-02
- Inventor: Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
- Applicant: Thomas E. Shatz , Dulip Ajantha Welipitiya , Brian R. York
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A tunnel junction TMR magnetoresistive sensor formed on layers having nitrogen interspersed therein. The nitrogenation of the layers on which the sensor is deposited allows the sensor layers to have very smooth, uniform surfaces. This greatly improves sensor performance by, for example, providing a very uniform barrier layer thickness.
Public/Granted literature
- US20080266725A1 TMR SENSOR HAVING AN UNDER-LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE Public/Granted day:2008-10-30
Information query
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