Invention Grant
- Patent Title: Level conversion circuit for a semiconductor circuit
- Patent Title (中): 半导体电路的电平转换电路
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Application No.: US11937049Application Date: 2007-11-08
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Publication No.: US07671655B2Publication Date: 2010-03-02
- Inventor: Kyoichi Takenaka , Takashi Ito
- Applicant: Kyoichi Takenaka , Takashi Ito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2006-304393 20061109
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A level conversion circuit includes a high-potential-side level conversion unit which is connected between a first high-voltage power supply and a first low-voltage power supply, and converts a high-potential-side voltage of an input signal, a low-potential-side level conversion unit which is connected between a second high-voltage power supply with a lower voltage than the first high-voltage power supply and a second low-voltage power supply with a lower voltage than the first low-voltage power supply, and converts a low-potential-side voltage of the input signal, and an output unit to which an output of the high-potential-side level conversion unit and an output of the low-potential-side level conversion unit are input, and which outputs a voltage level of the first high-voltage power supply and a voltage level of the second low-voltage power supply.
Public/Granted literature
- US20080111610A1 LEVEL CONVERSION CIRCUIT Public/Granted day:2008-05-15
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