Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US11657458Application Date: 2007-01-25
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Publication No.: US07671465B2Publication Date: 2010-03-02
- Inventor: Sunao Funakoshi , Katsumi Ishikawa , Tasao Soga
- Applicant: Sunao Funakoshi , Katsumi Ishikawa , Tasao Soga
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP
- Priority: JP2006-075883 20060320
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
A power semiconductor module having an increased reliability against thermal fatigue includes a power semiconductor element, a lower-side electrode connected to the lower side of the element, a first insulating substrate connected to the upper side of the lower-side electrode and having metallic foils bonded on both surfaces thereof, an upper-side electrode connected to the upper side of the power semiconductor element, a second insulating substrate connected to the upper side of the upper-side electrode and having metallic foils bonded on both surfaces thereof, a first heat spreader connected to the lower side of the first insulating substrate, and a second heat spreader connected to the upper side of the second insulating substrate. The power semiconductor element and the first and second insulating substrates are sealed with a resin.
Public/Granted literature
- US20070216013A1 Power semiconductor module Public/Granted day:2007-09-20
Information query
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