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US07671440B2 Lateral field-effect transistor having an insulated trench gate electrode 有权
具有绝缘沟槽栅极的横向场效应晶体管

  • Patent Title: Lateral field-effect transistor having an insulated trench gate electrode
  • Patent Title (中): 具有绝缘沟槽栅极的横向场效应晶体管
  • Application No.: US10561732
    Application Date: 2004-06-10
  • Publication No.: US07671440B2
    Publication Date: 2010-03-02
  • Inventor: Raymond J. E. Hueting , Erwin A. Hijzen
  • Applicant: Raymond J. E. Hueting , Erwin A. Hijzen
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: GB0314390.6 20030620
  • International Application: PCT/IB2004/001992 WO 20040610
  • International Announcement: WO2004/114411 WO 20041229
  • Main IPC: H01L29/76
  • IPC: H01L29/76
Lateral field-effect transistor having an insulated trench gate electrode
Abstract:
A field-effect transistor having cells (18) each having a source region (22), source body region (26), drift region (20), drain body region (28) and drain region (24) arranged longitudinally, laterally alternating with structures to achieve a reduced surface field. In embodiments, the structures can include longitudinally spaced insulated gate trenches (35) defining a gate region (31) adjacent the source or drain region (22, 24) and a longitudinally extending potential plate region (33) adjacent the drift region (20). Alternatively, a separate potential plate region (33) or a longitudinally extending semi-insulating field plate (50) may be provided adjacent the drift region (20). The transistor is suitable for bi-directional switching.
Abstract(Chinese):

一种具有单元（18）的场效应晶体管，每个单元具有源区域（22），源体区域（26），漂移区域（20），漏极体区域（28）和漏极区域（24） 结构实现减少的表面场。 在实施例中，结构可以包括限定邻近源极或漏极区域（22,24）的栅极区域（31）的纵向间隔开的绝缘栅极沟槽（35）和邻近漂移区域（20）的纵向延伸的电位板区域（33） 。 或者，可以在漂移区域（20）附近设置单独的电位板区域（33）或纵向延伸的半绝缘场板（50）。 晶体管适用于双向开关。

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