Invention Grant
- Patent Title: Image sensor and fabrication method thereof
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US11686957Application Date: 2007-03-15
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Publication No.: US07671385B2Publication Date: 2010-03-02
- Inventor: Hsin-Heng Wang , Chiu-Tsung Huang , Shih-Siang Lin
- Applicant: Hsin-Heng Wang , Chiu-Tsung Huang , Shih-Siang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Powerchip Semiconductor Corp.
- Current Assignee: Powerchip Semiconductor Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/075

Abstract:
An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned between any two adjacent pixel electrodes. The shield device has a shield electrode and an isolation structure surrounding the shield electrode so that the shield electrode is isolated from the pixel electrodes and the photo conductive layer by the isolation structure.
Public/Granted literature
- US20080224136A1 IMAGE SENSOR AND FABRICATION METHOD THEREOF Public/Granted day:2008-09-18
Information query
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