Invention Grant
- Patent Title: Display device and fabrication method thereof
- Patent Title (中): 显示装置及其制造方法
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Application No.: US11898997Application Date: 2007-09-18
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Publication No.: US07671370B2Publication Date: 2010-03-02
- Inventor: Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
- Applicant: Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
- Applicant Address: JP Chiba
- Assignee: Hitachi Displays, Ltd.
- Current Assignee: Hitachi Displays, Ltd.
- Current Assignee Address: JP Chiba
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2006-262884 20060927
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
Public/Granted literature
- US20080073654A1 Display device and fabrication method thereof Public/Granted day:2008-03-27
Information query
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