Invention Grant
- Patent Title: Asymmetric bis-silanes and methods for making and their use
- Patent Title (中): 不对称双硅烷及其制备方法及其应用
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Application No.: US11998227Application Date: 2007-11-29
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Publication No.: US07671227B2Publication Date: 2010-03-02
- Inventor: Steven B. Dawes , James R. Matthews
- Applicant: Steven B. Dawes , James R. Matthews
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent John L. Haack
- Main IPC: C07F7/04
- IPC: C07F7/04
Abstract:
An asymmetric bis-silane compound of the formula A3Si—R1—SiB3 where A, B, and R1 are as defined herein, and to methods for making the bis-silane compound and their use to form layers or films of metal oxide particles, and which layers or films adhere to a suitable substrate. The materials and methods can be used, for example, to make photoactive devices.
Public/Granted literature
- US20080207937A1 Asymmetric bis-silanes and methods for making and their use Public/Granted day:2008-08-28
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