Invention Grant
- Patent Title: Porous silicon carbide
- Patent Title (中): 多孔碳化硅
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Application No.: US11867783Application Date: 2007-10-05
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Publication No.: US07670979B2Publication Date: 2010-03-02
- Inventor: Tariq Quadir , Corey Dunn
- Applicant: Tariq Quadir , Corey Dunn
- Applicant Address: US OH Cleveland
- Assignee: CerCo LLC
- Current Assignee: CerCo LLC
- Current Assignee Address: US OH Cleveland
- Agency: Rankin, Hill & Clark LLP
- Main IPC: C04B38/02
- IPC: C04B38/02 ; C04B35/565 ; C04B35/563

Abstract:
A porous refractory product includes a matrix of sintered silicon carbide having a porosity of about 45% to about 65%. The matrix is formed by heating in a noble gas atmosphere a cast preform including a mixture of alpha-silicon carbide and boron carbide each having a particle size of less than about 1 micron. The heating causes the formation of gaseous SiO within the silicon carbide matrix, which, in turn, forms pores having an average size of less than about 1 micron. The porous refractory products herein are suitable for use in a variety of applications including for use in high temperature particulate filtering applications.
Public/Granted literature
- US20090093358A1 Porous Silicone Carbide Public/Granted day:2009-04-09
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