Positive tone bi-layer method

Invention Grant

US07670953B2 Positive tone bi-layer method 有权

Title translation: 正音双层法

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Patent Title: Positive tone bi-layer method
Patent Title (中): 正音双层法
Application No.: US11844824

Application Date: 2007-08-24
Publication No.: US07670953B2

Publication Date: 2010-03-02
Inventor: Sidlgata V. Sreenivasan
Applicant: Sidlgata V. Sreenivasan
Applicant Address: US TX Austin
Assignee: Molecular Imprints, Inc.
Current Assignee: Molecular Imprints, Inc.
Current Assignee Address: US TX Austin
Agent Laura C. Robinson
Main IPC: H01L21/311
IPC: H01L21/311

Abstract:

The present invention provides a method to pattern a substrate which features creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions. Formed upon the patterned layer is a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions.

Abstract(Chinese):

本发明提供一种通过在衬底上形成具有突起和凹陷的图案化层来形成特征为产生多层结构的衬底的方法。形成在图案层上的是保形层，多层结构具有背离衬底的表冠表面。去除多层结构的部分以暴露与突起叠加的衬底的区域，同时在与凹部重叠的冠表面的区域中形成硬掩模。

Public/Granted literature

US20080118872A1 Positive Tone Bi-Layer Method Public/Granted day:2008-05-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀