Invention Grant
- Patent Title: Copper metallization of through silicon via
- Patent Title (中): 通过硅通孔的铜金属化
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Application No.: US12185641Application Date: 2008-08-04
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Publication No.: US07670950B2Publication Date: 2010-03-02
- Inventor: Thomas B. Richardson , Yun Zhang , Chen Wang , Vincent Paneccasio, Jr. , Cai Wang , Xuan Lin , Richard Hurtubise , Joseph A. Abys
- Applicant: Thomas B. Richardson , Yun Zhang , Chen Wang , Vincent Paneccasio, Jr. , Cai Wang , Xuan Lin , Richard Hurtubise , Joseph A. Abys
- Applicant Address: US CT West Haven
- Assignee: Enthone Inc.
- Current Assignee: Enthone Inc.
- Current Assignee Address: US CT West Haven
- Agency: Senniger Powers LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.
Public/Granted literature
- US20090035940A1 COPPER METALLIZATION OF THROUGH SILICON VIA Public/Granted day:2009-02-05
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