Invention Grant
US07670919B2 Integrated capacitors in package-level structures, processes of making same, and systems containing same
有权
封装级结构中的集成电容器，制造相同的工艺，以及含有其的系统
- Patent Title: Integrated capacitors in package-level structures, processes of making same, and systems containing same
- Patent Title (中): 封装级结构中的集成电容器，制造相同的工艺，以及含有其的系统
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Application No.: US11323312Application Date: 2005-12-30
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Publication No.: US07670919B2Publication Date: 2010-03-02
- Inventor: John J. Tang , Xiang Yin Zeng , Jiangqi He , Ding Hai
- Applicant: John J. Tang , Xiang Yin Zeng , Jiangqi He , Ding Hai
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent John N. Greaves
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
Public/Granted literature
- US20070158818A1 Integrated capacitors in package-level structures, processes of making same, and systems containing same Public/Granted day:2007-07-12
Information query
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