Invention Grant
US07670865B2 Image sensor pixel having photodiode with multi-dopant implantation 有权
具有多掺杂剂注入的光电二极管的图像传感器像素

Image sensor pixel having photodiode with multi-dopant implantation
Abstract:
An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.
Information query
Patent Agency Ranking
0/0