Invention Grant
US07670865B2 Image sensor pixel having photodiode with multi-dopant implantation
有权
具有多掺杂剂注入的光电二极管的图像传感器像素
- Patent Title: Image sensor pixel having photodiode with multi-dopant implantation
- Patent Title (中): 具有多掺杂剂注入的光电二极管的图像传感器像素
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Application No.: US12050713Application Date: 2008-03-18
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Publication No.: US07670865B2Publication Date: 2010-03-02
- Inventor: Howard E. Rhodes
- Applicant: Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: H01L21/329
- IPC: H01L21/329

Abstract:
An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.
Public/Granted literature
- US20080166830A1 IMAGE SENSOR PIXEL HAVING PHOTODIODE WITH MULTI-DOPANT IMPLANTATION Public/Granted day:2008-07-10
Information query
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