Invention Grant
- Patent Title: Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle
- Patent Title (中): 基板处理方法，基板处理装置，显影方法，半导体装置的制造方法以及清洗显影液喷嘴的方法
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Application No.: US10988639Application Date: 2004-11-16
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Publication No.: US07669608B2Publication Date: 2010-03-02
- Inventor: Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
- Applicant: Kei Hayasaki , Shinichi Ito , Tatsuhiko Ema , Riichiro Takahashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2002-017937 20020128; JP2002-057764 20020304
- Main IPC: B08B3/00
- IPC: B08B3/00
Abstract:
There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.
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