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US07656919B2 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth 失效
具有通过外延层过度生长制造的环形激光器的半导体系统

Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
Abstract:
The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
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