Invention Grant
US07656919B2 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
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具有通过外延层过度生长制造的环形激光器的半导体系统
- Patent Title: Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
- Patent Title (中): 具有通过外延层过度生长制造的环形激光器的半导体系统
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Application No.: US12359326Application Date: 2009-01-25
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Publication No.: US07656919B2Publication Date: 2010-02-02
- Inventor: Michael Renne Ty Tan , Scott W. Corzine , David P. Bour
- Applicant: Michael Renne Ty Tan , Scott W. Corzine , David P. Bour
- Applicant Address: SG Singapore
- Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01S3/083
- IPC: H01S3/083

Abstract:
The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
Public/Granted literature
- US20090129426A1 Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth Public/Granted day:2009-05-21
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