Invention Grant
US07656742B2 Circuit and method for sampling valid command using extended valid address window in double pumped address scheme memory device
有权
在双泵浦地址方案存储器件中使用扩展有效地址窗口采样有效命令的电路和方法
- Patent Title: Circuit and method for sampling valid command using extended valid address window in double pumped address scheme memory device
- Patent Title (中): 在双泵浦地址方案存储器件中使用扩展有效地址窗口采样有效命令的电路和方法
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Application No.: US12128464Application Date: 2008-05-28
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Publication No.: US07656742B2Publication Date: 2010-02-02
- Inventor: Hyun-Jin Kim , Seong-Jin Jang , Jeong-Don Lim , Kwang-Il Park , Ho-Young Song , Woo-Jin Lee
- Applicant: Hyun-Jin Kim , Seong-Jin Jang , Jeong-Don Lim , Kwang-Il Park , Ho-Young Song , Woo-Jin Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2005-0111418 20051121
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Provided are a circuit and method for sampling a valid command using a valid address window extended for a high-speed operation in a double pumped address scheme memory device. A method for extending the valid address window includes: inputting a valid command signal and a first address signal at the first cycle of a clock signal; inputting a second address signal at the second cycle of the clock signal; generating a decoded command signal and extended first and second internal address signals respectively in response to the command signal and the address signals; and latching and decoding the extended first and second internal address signals in response to the decoded command signal.
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