A semiconductor memory device includes: memory cells respectively arranged on intersecting points of a plurality of word lines and a plurality of data lines, and respectively having a capacitor for storing data; a sense amplifier provided in between the data lines forming a data line pair so as to amplify an electric potential difference between the data lines and to perform data reading; and a test memory cell arranged on each of the data lines and having a test capacitor with a capacitance value set smaller than the above capacitor, and when performing a test for a memory cell, inversed data of the data to be stored into a target memory cell of a test target is pre-written into the test memory cell.