Invention Grant
- Patent Title: Memory with improved BIST
- Patent Title (中): 内存改进了BIST
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Application No.: US11563459Application Date: 2006-11-27
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Publication No.: US07656726B2Publication Date: 2010-02-02
- Inventor: Wei-Chia Cheng , Chen-Hui Hsieh
- Applicant: Wei-Chia Cheng , Chen-Hui Hsieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
An integrated circuit device includes an embedded memory having a plurality of memory macros and a built-in-self-test (BIST) circuit coupled to the plurality of memory macros for simultaneous operation of the memory macros, wherein the BIST circuit is configured to select from the memory macros' data outputs an individual memory macro's data output for analysis while the memory macros are operated simultaneously.
Public/Granted literature
- US20080126901A1 MEMORY WITH IMPROVED BIST Public/Granted day:2008-05-29
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