Invention Grant
US07656722B2 Semiconductor memory apparatus including synchronous delay circuit unit
有权
半导体存储装置，包括同步延迟电路单元
- Patent Title: Semiconductor memory apparatus including synchronous delay circuit unit
- Patent Title (中): 半导体存储装置，包括同步延迟电路单元
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Application No.: US11878908Application Date: 2007-07-27
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Publication No.: US07656722B2Publication Date: 2010-02-02
- Inventor: Seong Hwi Song
- Applicant: Seong Hwi Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2007-0035826 20070412
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory apparatus includes a write driver that receives data transmitted through an input/output line, and a synchronous delay circuit unit that generates an enable signal so as to allow the data transmitted through the input/output line to be supplied to the write driver.
Public/Granted literature
- US20080253204A1 Semiconductor memory apparatus including synchronous delay circuit unit Public/Granted day:2008-10-16
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